PTFA240451E V1

PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS® FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. Features • Thermally-enhanced, lead-free and RoHS-compliant packaging Three-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz Efficiency ACP Up ACP Low ALT Up Drain Efficiency (%) 40 35 -38 -42 -46 30 -50 25 -54 20 -58 15 -62 Efficiency 10 -66 5 -70 0 -74 30 32 34 36 38 40 Adj. Ch. Power Ratio (dBc) 45 PTFA240451E Package H-30265-2 42 Output Power, Avg. (dBm) • Broadband internal matching • Typical two-carrier CDMA performance at 2450 MHz, 28 V - Average output power = 10 W - Linear Gain = 14 dB - Efficiency = 27% - Adjacent channel power = –45 dBc • Typical CW performance, 2450 MHz, 28 V - Output power at P–1dB = 50 W - Efficiency = 54% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power RF Characteristics 3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz bandwidth at ƒC ± 2.135 MHz offset Characteristic Symbol Min Typ Max Unit Gain Gps — 14 — dB Drain Efficiency ηD — 31 — % ACPR — –45 — dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 04, 2008-03-04 PTFA240451E RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 2480 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 13.5 14 — dB Drain Efficiency ηD 39 40 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.17 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 196 W 1.12 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 0.89 °C/W Ordering Information Type and Version Package Outline Package Description Marking PTFA240451E H-30265-2 Thermally-enhanced slotted flange, single-ended PTFA240451E Data Sheet V1 2 of 10 Rev. 04, 2008-03-04 PTFA240451E Typical Performance (data taken in a production test fixture) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) VDD = 28 V, IDQ = 450 mA, ƒ1 = 2449 MHz, ƒ 2 = 2450 MHz -20 57 16 Efficiency -30 5th Order Gain (dB) IMD (dBc) -40 -50 -60 7th Order Gain 13 -80 32 34 36 38 40 42 53 14 -70 30 55 15 3rd Order 12 2420 44 51 Output Power 2430 2440 2450 2460 2470 49 2480 Efficiency (%), Output Power (W) VDD = 28 V, IDQ = 450 mA Frequency (MHz) Output Power, Avg. (dBm) IM3 vs. Output Power for Selected Biases 2-Tone Broadband Performance VDD = 28 V, ƒ 1 = 2449 MHz, ƒ 2 = 2450 MHz VDD = 28 V, IDQ = 450 mA, POUT Avg. = 43.52 dBm -20 50 -5 337 m A -40 -50 562 m A 450 m A -60 -70 30 32 34 36 38 40 42 -10 30 -15 20 -20 Gain 10 -25 Return Loss 0 2400 44 Output Power, Avg. (dBm ) Data Sheet 40 Return Loss (dB) IMD (dBc) -30 Gain (dB), Efficiency (%) Efficiency 2420 2440 2460 2480 -30 2500 Frequency (MHz) 3 of 10 Rev. 04, 2008-03-04 PTFA240451E Typical Performance (cont.) Power Sweep Gain & Efficiency vs. Output Power VDD = 28 V, ƒ = 2450 MHz VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz IDQ = 675 mA 50 15 15.0 Gain 14.5 IDQ = 450 mA 13.5 14 40 13 30 12 12.5 20 Efficiency 13.0 10 11 IDQ = 225 mA 12.0 0 10 30 32 34 36 38 40 42 44 46 48 30 34 Output Power (dBm) 38 46 50 Output Power (dBm) IS-95 CDMA Performance Output Power (at 1 dB Compression) vs. Supply Voltage VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz IDQ = 450 mA, ƒ = 2450 MHz TCASE = 25°C TCASE = 90°C 35 49 Drain Efficiency (%) 48 47 46 -35 ACP ƒ C–0.75 MHz 30 Output Power (dBm) 42 -40 -45 25 Efficiency -50 20 -55 15 -60 10 -65 5 -70 ACPR ƒ C+1.98 MHz 0 45 24 26 28 30 Supply Voltage (V) Data Sheet -75 30 32 32 34 36 38 40 Adj. Channel Power Ratio (dBc) 14.0 Gain (dB) Power Gain (dB) 60 16 15.5 Drain Efficiency (%) 16.0 42 Output Power, Avg. (dBm) 4 of 10 Rev. 04, 2008-03-04 PTFA240451E Typical Performance (cont.) WiMAX Performance VDD = 28 V, IDQ = 0.45 A, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 36 -15 Efficiency 30 -20 ƒ = 2.62 GHz ƒ = 2.68 GHz 24 -25 ƒ = 2.65 GHz 0.09 A 0.28 A 1.02 0.46 A 1.01 0.70 A 1.00 1.39 A 0.99 2.09 A Efficiency (%) Normalized Bias Voltage (V) 1.03 2.78 A 0.98 3.48 A 0.97 18 -30 12 -35 6 -40 EVM (dBc) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 4.17 A 0.96 0.95 -20 0 0 20 40 60 80 100 -45 15 Case Temperature (°C) 20 25 30 35 40 45 Output Power (dBm) WiMAX Performance VDD = 28 V, ƒ = 2450 MHz (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -15 EVM (dB) -20 IDQ = 0.28 A -25 IDQ = 0.67 A -30 -35 IDQ = 0.45 A -40 -45 15 20 25 30 35 40 45 Output Power (dBm) Data Sheet 5 of 10 Rev. 04, 2008-03-04 PTFA240451E Broadband Circuit Impedance Z Source Ω Frequency jX 2400 22.12 –18.74 6.98 –2.35 2420 20.27 –18.71 6.73 –2.14 2450 18.30 –19.18 6.61 –2.17 2480 15.24 –19.95 6.17 –2.32 2500 13.45 –20.19 5.92 –2.41 Z Load 2500 MHz 0.5 R 0.1 0 .0 DT OW ARD L OA GTHS E LEN jX 2400 MHz 0.1 Z Source WAV